1000V 1.1V @ 1A (DO-214AC) Rohs Diodes - General Purpose GS1M Transistor Rectifiers

Type : JFET, Field-Effect Transistor, IGBT Transistor

Series : standard

Mounting Type : standard

Description : /

Model Number : FR157 M1

Place of Origin : Guangdong, China

Brand Name : original

D/C : ,

Package Type : Throught Hole

Application : Fast Recovery Rectifier Diodes

Supplier Type : Other

Cross Reference : standard

Media Available : Other

Brand : ,

Voltage - Collector Emitter Breakdown (Max) : ,

Vce Saturation (Max) @ Ib, Ic : ,

DC Current Gain (hFE) (Min) @ Ic, Vce : ,

Resistor - Base (R1) : ,

Resistor - Emitter Base (R2) : ,

FET Feature : Standard

Drain to Source Voltage (Vdss) : ,

Current - Continuous Drain (Id) @ 25°C : ,

Rds On (Max) @ Id, Vgs : ,

Vgs(th) (Max) @ Id : ,

Gate Charge (Qg) (Max) @ Vgs : ,

Input Capacitance (Ciss) (Max) @ Vds : ,

Frequency : ,

Current Rating (Amps) : ,

Noise Figure : ,

Power - Output : ,

Voltage - Rated : ,

Drive Voltage (Max Rds On, Min Rds On) : ,

Vgs (Max) : ,

IGBT Type : ,

Configuration : standard

Vce(on) (Max) @ Vge, Ic : ,

Input Capacitance (Cies) @ Vce : ,

Input : ,

NTC Thermistor : ,

Voltage - Breakdown (V(BR)GSS) : ,

Current - Drain (Idss) @ Vds (Vgs=0) : ,

Current Drain (Id) - Max : ,

Voltage - Cutoff (VGS off) @ Id : ,

Resistance - RDS(On) : ,

Voltage : ,

Voltage - Output : ,

Voltage - Offset (Vt) : ,

Current - Gate to Anode Leakage (Igao) : ,

Current - Valley (Iv) : ,

Current - Peak : ,

Applications : ,

Transistor Type : mrf150 rf power transistor

Packaging Details : Anti-static packaging

Port : shenzhen

Supply Ability : 10000 Piece/Pieces per Week

MOQ : 10 pieces

Price : $0.10/pieces >=10 pieces