TSM950N10CW RPG MOS Power Management IC Chips Mosfet SOT-223-3 TSM950N10CW

Type : MOS Transistor, IGBT Transistor

Operating Temperature : -55°C ~ 150°C (TJ)

Series : /

Mounting Type : Surface Mount

Description : /

Model Number : TSM950N10CW

Place of Origin : Guangdong, China

Brand Name : original

D/C : 22+

Package Type : SOT-223-3

Application : Diodes - Rectifiers

Supplier Type : Other

Cross Reference : standard

Media Available : Other

Brand : MOSFET SOT-223-3

Voltage - Collector Emitter Breakdown (Max) : ,

Vce Saturation (Max) @ Ib, Ic : ,

DC Current Gain (hFE) (Min) @ Ic, Vce : ,

Package / Case : SOT-223

Resistor - Base (R1) : ,

Resistor - Emitter Base (R2) : ,

FET Feature : /

Drain to Source Voltage (Vdss) : ,

Current - Continuous Drain (Id) @ 25°C : ,

Rds On (Max) @ Id, Vgs : ,

Vgs(th) (Max) @ Id : /

Gate Charge (Qg) (Max) @ Vgs : ,

Input Capacitance (Ciss) (Max) @ Vds : ,

Frequency : ,

Current Rating (Amps) : ,

Noise Figure : ,

Power - Output : ,

Voltage - Rated : ,

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Vgs (Max) : ±20V

IGBT Type : ,

Configuration : /

Vce(on) (Max) @ Vge, Ic : ,

Input Capacitance (Cies) @ Vce : ,

Input : ,

NTC Thermistor : ,

Voltage - Breakdown (V(BR)GSS) : ,

Current - Drain (Idss) @ Vds (Vgs=0) : ,

Current Drain (Id) - Max : ,

Voltage - Cutoff (VGS off) @ Id : ,

Resistance - RDS(On) : ,

Voltage : ,

Voltage - Output : ,

Voltage - Offset (Vt) : ,

Current - Gate to Anode Leakage (Igao) : ,

Current - Valley (Iv) : ,

Current - Peak : ,

Applications : ,

Transistor Type : mrf150 rf power transistor

Packaging Details : New and Original, factory sealed packing, it will be pack in one of these packing type: Tube, Tray, Tape and Reel, Tape and Box, Bulk packing, Bag and etc. Please kindly contact us for more details.

Port : shenzhen

Supply Ability : 50000000 Piece/Pieces per Day

MOQ : 100 pieces

Price : $0.50/pieces >=100 pieces