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Type : Other, IGBT Transistor
Operating Temperature : -55°C ~ 175°C (TJ)
Series : 7807
Mounting Type : Through Hole
Description : /
Model Number : IRFP140N
Place of Origin : Guangdong, China
Brand Name : original
D/C : /
Package Type : /
Application : /
Supplier Type : Other
Cross Reference : standard
Media Available : Other
Brand : MOSFET N-CH 100V 33A TO-247AC
Current - Collector (Ic) (Max) : /
Voltage - Collector Emitter Breakdown (Max) : /
Vce Saturation (Max) @ Ib, Ic : na
Current - Collector Cutoff (Max) : na
DC Current Gain (hFE) (Min) @ Ic, Vce : na
Power - Max : na
Frequency - Transition : na
Package / Case : TO-247-3
Resistor - Base (R1) : na
Resistor - Emitter Base (R2) : na
FET Type : N-Channel
FET Feature : na
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 33A (Tc)
Rds On (Max) @ Id, Vgs : 52mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 4V @ 250UA
Gate Charge (Qg) (Max) @ Vgs : 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 25V
Frequency : na
Current Rating (Amps) : na
Noise Figure : na
Power - Output : na
Voltage - Rated : na
Drive Voltage (Max Rds On, Min Rds On) : 10V
Vgs (Max) : ±20V
IGBT Type : na
Configuration : na
Vce(on) (Max) @ Vge, Ic : na
Input Capacitance (Cies) @ Vce : na
Input : na
NTC Thermistor : na
Voltage - Breakdown (V(BR)GSS) : na
Current - Drain (Idss) @ Vds (Vgs=0) : na
Current Drain (Id) - Max : na
Voltage - Cutoff (VGS off) @ Id : na
Resistance - RDS(On) : na
Voltage : na
Voltage - Output : na
Voltage - Offset (Vt) : na
Current - Gate to Anode Leakage (Igao) : na
Current - Valley (Iv) : na
Current - Peak : na
Applications : na
Transistor Type : mrf150 rf power transistor
Packaging Details : Anti-static packaging
Port : SHENZHEN
Supply Ability : 10000 Piece/Pieces per Day
MOQ : 10 pieces
Price : $1.00/pieces >=10 pieces
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IRFP140N N-Channel 100V 33A 140W Through Hole TO-247 IRFP140NPBF Images |