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Type : -, IGBT Transistor
Operating Temperature : -, 55 150
Series : standard
Mounting Type : Custom, -, Through Hole
Description : Custom
Model Number : TK8A60DA
Place of Origin : Guangdong, China
Brand Name : original
D/C : 2021
Package Type : -
Application : standard
Supplier Type : Original manufacturer, Agency, Other
Cross Reference : standard
Media Available : datasheet, Photo, Other
Brand : -
Current - Collector (Ic) (Max) : standard
Voltage - Collector Emitter Breakdown (Max) : -
Vce Saturation (Max) @ Ib, Ic : -
Current - Collector Cutoff (Max) : standard
DC Current Gain (hFE) (Min) @ Ic, Vce : -
Power - Max : standard
Frequency - Transition : standard
Package / Case : TO-220SIS
Resistor - Base (R1) : -
Resistor - Emitter Base (R2) : -
FET Type : -, N-Channel
FET Feature : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : -
Frequency : -
Current Rating (Amps) : -
Noise Figure : -
Power - Output : -
Voltage - Rated : -
Drive Voltage (Max Rds On, Min Rds On) : -
Vgs (Max) : -
IGBT Type : -
Configuration : -
Vce(on) (Max) @ Vge, Ic : -
Input Capacitance (Cies) @ Vce : -
Input : -
NTC Thermistor : -
Voltage - Breakdown (V(BR)GSS) : -
Current - Drain (Idss) @ Vds (Vgs=0) : -
Current Drain (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : -
Resistance - RDS(On) : -
Voltage : -
Voltage - Output : -
Voltage - Offset (Vt) : -
Current - Gate to Anode Leakage (Igao) : -
Current - Valley (Iv) : -
Current - Peak : -
Applications : -
Transistor Type : mrf150 rf power transistor
Part Status : Active
Supplier Device Package : to-220
Packaging : Tube
Warranty : 365days
Data Code : Latest Details
Payment way : all accept
Packaging Details : export pacakge
Port : shhenzhen
Supply Ability : 10000 Piece/Pieces per Month
Price : $0.10/pieces 1-499 pieces
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Integrated Circuit TK8A60 TK8A60DA TO-220F K8A60DA Images |